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GS81332QT19CE-250M - Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8 Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM

GS81332QT19CE-250M_9061345.PDF Datasheet


 Full text search : Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8 Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM


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GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37C Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM
GSI Technology
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FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压,1.50欧姆,拉德硬,SEGR性,P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
Intersil, Corp.
INTERSIL[Intersil Corporation]
HS1-1840RH-8 HS1-1840RH-Q HS9-1840RH_SAMPLE HS1-18 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28
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Harris, Corp.
HARRIS[Harris Corporation]
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PEREGRINE[Peregrine Semiconductor Corp.]
 
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